The data concern the development of a field-effect phototransistor based on a heterostructure of monolayer molybdenum disulfide (MoS2) and indium arsenide (InAs) quantum dots for infrared detection. The MoS2 monolayer was grown via metal-organic chemical vapor deposition (MOCVD), transferred to a p++ silicon (Si)/silicon dioxide (SiO2) that acts as a back gate, and patterned with nickel (Ni)/palladium (Pd) contacts by electron-beam lithography. Commercial InAs quantum dots were deposited by spin-coating. Measurements include optoelectronic characterization under blue (455 nm), green (530 nm), red (735 nm), and infrared (1,200 nm) light-emitting diodes (LEDs), as well as atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), photoluminescence (PL) spectroscopy, Raman spectroscopy, and technology computer-aided design (TCAD) simulations. This work is part of a thesis/dissertation. The data cannot be made available at this time. The author is available for contact.